ANNEALING BEHAVIOR AND LATTICE SITE LOCATION OF Er IMPLANTED InGaN
نویسندگان
چکیده
Single crystalline InGaN epilayers with different In content were implanted with Er fluences in the range of 1×10 to 5×10 cm at room temperature. The structural changes and lattice site location were studied with emission channeling and RBS/channeling. Photoluminescence measurements were also performed to study the optical properties of the implanted samples. After implantation of 1×10 Er cm, the emission channeling results show the incorporation of a significant fraction of Er in substitutional Ga/In sites. For fluences of 1×10 Er cm the aligned RBS spectrum along the [0001] direction reveals the displacement of the Er ions into random sites in the entire implanted region. Proximity cap annealing at 400°C and 500°C leads to some damage recovery on the samples implanted with lowest fluence accompanied by an increase of the substitutional fraction of Er. Despite the lattice disorder, a fraction of the Er ions are incorporated into optically active sites and luminescence emission was observed at 1.54 μm after annealing at 400°C. PACS: 68.55. Jk; 78.55. Cr; 82.80Yc.
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